Difficulties in mass production of 8-inch SiC wafers in China:
1. The high-temperature process is related to the yield of SiC, which is also one of the key links in the research and development of major SiC manufacturers, and in addition to the differences with silicon wafers in the production process, there are also some differences in the development of SiC from 6 inches to 8 inches.
2. In the ion implantation, thin film deposition, dielectric etching, metallization and other links of power semiconductor manufacturing, the gap between 8-inch silicon carbide and 6-inch SiC is not large.
The manufacturing difficulties of 3.8-inch SiC are mainly concentrated in substrate growth, substrate cutting and processing, and oxidation process, among which, in terms of substrate growth, the difficulty of substrate growth will be multiplied when the diameter is expanded to 8 inches; In terms of substrate cutting processing, the larger the size of the substrate, the more significant the problem of cutting stress and warpage.
4. The oxidation process has always been the core difficulty in the silicon carbide process, and the 8-inch and 6-inch have different requirements for the control of air flow and temperature field, and the process needs to be developed independently.
5. At present, the silicon carbide industry is dominated by 6 inches, accounting for nearly 80% of the market share, and 8 inches are less than 1%, if it reaches the mature stage, the price of 8-inch monoliths is about 1.5 times that of 6 inches, and the number of grains that can be produced by 8 inches is about 1.8 times that of 6-inch SiC wafers, and the wafer utilization rate will be significantly improved. #晶圆ic# #半导体晶圆# #半导体材料刻蚀# #中国晶圆# #揭示芯片门道# #芯片技术的进步# #芯片制造水准# #探讨半导体发展# #高端芯片制造# #探索芯片的未来#
