As a third-generation semiconductor material, gallium nitride has been widely used in the consumer power supply market in the past two years. Especially with the entry of major mobile phones and laptop brands into the fast charging of gallium nitride, the performance of gallium nitride power devices has been further verified, and the popularity of gallium nitride technology in the fast charging market has also been accelerated.
At present, the gaN used in the market of fast charging sources is mainly in three forms, namely GaN single-tube power devices, GaN power chips with built-in drivers, and combined chips with built-in controllers, drivers, and GaN power devices. Among them, GaN single-tube power devices have developed the most rapidly, especially since the introduction of the 14th Five-Year Plan, the state has increased its support for the third generation of semiconductors, more and more factories have entered the gallium nitride, and the fast charging products developed based on different brands of GaN devices have also been mass-produced.
It is understood that at the upcoming 2022 (spring) Asian Charging Exhibition, 15 well-known third-generation semiconductor manufacturers in the industry will attend to share the latest industry trends and product technologies, and display the application cases of gallium nitride and silicon carbide devices in different fields.
Gallium nitride fast charge direct drive controller
The increasingly large gaN fast charging market and the increasing abundance of gallium nitride power devices have formed a strong demand for controllers and drivers. To this end, a number of domestic power chip manufacturers for the application of gallium nitride fast charging launched a built-in driver master control, the driver is integrated inside the main control chip, can directly drive The GaN power device, on the one hand, streamlines the peripheral circuit design, but also improves product stability and saves costs.
According to the incomplete statistics of the charging head network, Maorui core, Nanxin, Biyiwei, Jiehuate, Renesas, Yachengwei, Maxes Semiconductor, Huayuan Semiconductor and other manufacturers have launched gallium nitride direct drive controllers, and some of them have achieved mass production of goods, which have been applied in many gallium nitride fast charging source products and obtained good market feedback.
Direct Drive Controller Advantages
Although gallium nitride power devices have the characteristics of high frequency, high efficiency and high power density, compared with traditional silicon power devices, they also have higher requirements for the controller, and require additional drivers, and the circuit design is relatively complex. According to incomplete statistics of the charging head network, there have been more than a dozen GaN power device suppliers around the world, and only a few of them are built-in driver designs, most of which are GaNFET single-tube designs, and the application needs a drive circuit in addition to the controller.
The emergence of gallium nitride direct drive controllers has also accelerated the application of GaN power devices in the fast charging market; and different direct drive controllers with GaN power devices can form a variety of fast charging source architectures such as QR and LLC to meet diverse market needs.
It is understood that the 2022 (spring) USB PD & Type-C Asia Conference will be held from March 23 to March 25 in Shenzhen Futian Convention and Exhibition Center, the following is the charging head network according to the exhibitor information collated gallium nitride fast charging direct drive controller manufacturer product cases.
Booth B49-B50, B67-B68: MERAKI Maoruixin
In the gallium nitride fast charging market, Maoruixin has launched a total of 5 gaN main control chips, MK2787/2788 is a combined gallium nitride chip, suitable for 30W fast charging design; of which the MK2697 series contains three products, of which MK2697G is a gallium nitride direct drive controller, which integrates a controller and driver in the SOT23-6 package, and the peripheral circuit is greatly simplified.
MK2697G
MK2697G is a high-frequency QR AC-DC PWM control chip using SOT23-6 extremely small package, Vcc withstand voltage 110V, support 9-90V Vcc power supply, no need for external voltage regulator circuit, reduce the layout space, more flexible use. Using patented drive technology, GaN power devices can be directly driven and SR Vds stress can be optimized, which effectively improves product efficiency and power density.
The MK2697G has adaptive multi-mode characteristics to meet the energy efficiency requirements under different output voltages of PD fast charge, and the 200KHz operating frequency can make full use of the advantages of gallium nitride switch tubes to improve efficiency and reduce adapter volume.
Application Cases:
1. Maoruixin launched a 30W gallium nitride fast charging TURNKEY one-stop solution
2. Maoruixin launched the gallium nitride direct drive controller, and the six-pin package set a new industry record
3. Maoruixin engineers teach you three tricks to solve the voltage spike of the fast charging system
Booth C72-C73, C86-C87: SOUTHCHIP South Core
It is understood that at present, Nanxin has launched SC2021 series, SC3023 series and other gallium nitride direct drive controllers based on the QR flyback architecture, and has achieved batch shipments, and has been adopted by Nubia, QCY, Greenlink, Remax and other brands.
In addition, for the application of high-density fast charging source, SC3050, SC3056, SC3057 three gallium nitride sealing chips have been launched, of which SC3056 has been successfully mass-produced in besel 30W GaN3 gallium nitride fast charger.
Nanxin SC3021C
The main control chip of switching power supply adopts Nanxin SC3021C to meet the needs of various high-frequency QR fast charging. Sc3021C's proprietary GaN direct drive design eliminates the need for external drives or discrete drive components.
Integrated segmented power supply mode, single winding power supply, no need for complex power supply circuits. Built-in high-voltage start-up and AC input Brown In/Out functions, integrated X-cap discharge function. The SC3021C supports operating frequencies up to 170KHz and is suitable for wire-wound transformers.
1. Travel socket and gallium nitride fast charging, disassemble an innovative design 65W charger
2. Disassembly report: PANFORE 65W PD fast charger with gallium nitride charger
3, only 19mm thin, Nubian minion 65W double gallium nitride fast charge disassembly
4. Disassembly report: QCY 65W 2C1A Gallium nitride fast charger
5. Disassembly report: Gushi Technology Mini 30W Gallium Nitride Fast Charger
6. Disassembly report: Kexun mini 33W fast-charging Gallium nitride charger
7. The headphone factory QCY entered the gallium nitride fast charging market, and the first 65W 1A1C charger was disassembled
8. Dismantling report: Sicgecs 65W 1A1C Gallium nitride super flash charge
Nanxin SC3021D
The switching power supply main control chip is nanxin SC3021D, which supports 170KHz GaN direct drive, designed for 30W gallium nitride charger, in this scheme can use ATQ17/15 winding transformer, which is very cost-effective.
1. Dismantling report: Gushi Technology 30W PD fast-charging Gallium Nitride charger
2. Disassembly report: TEGIC mini 30W PD fast charge gallium nitride charger
3. Disassembly report: Greenlink 30W PD fast-charging gallium nitride charger
4. Disassembly report: Chuangfuyuan mini 33W 1A1C Gallium nitride fast charger
6, the light of domestic goods, Nubia 30W gallium nitride fast charging disassembly, built-in a full set of domestic chips
7. Juquanxin provides program support, ruiyuan industry 33W 1A1C gallium nitride fast charging and disassembly
8. REMAX 30W fast charge disassembly, new mini gallium nitride solution exposed
Nanxin SC3023C
The Nanxin SC3023C is a high-frequency quasi-resonant flyback controller with a built-in gallium nitride drive that can be used to directly drive gallium nitride switch tubes. The SC3023C features built-in X-capacitor discharge and high-voltage start-up, and adaptive switching frequency foldback for greater efficiency over the entire load range.
QR and DCM modes are turned on by turning on the valley floor for high efficiency. Operates in low-power mode when uncarried, reducing the system's standby power consumption. Built-in comprehensive protection function, support for in-chip and external overtemperature protection function.
1. Redesign the plug board and disassemble the GreenLink 65W smart charging magic box 2C2A gallium nitride fast charging socket
Booth B47-B48: KIWI
Biyiwei has launched a variety of gallium nitride controllers, including KP2202/KP2206 series of gallium nitride direct drive chips with quasi-resonant flyback architecture, which supports three frequency adjustables, which can be directly combined with E-GaN to develop gallium nitride fast charging, saving external circuits. In addition, Biyiwei also has a combined gaN chip KP22064 and KP22066, the former is suitable for 30W-45W gallium nitride fast charging design, and the latter is suitable for 65W fast charging design.
Biyi Micro KP2202
Biyi micro KP2202 has a built-in high-voltage start function, and integrates AC input power-down detection and X capacitor discharge function; the chip has ±1% constant voltage accuracy; ultra-low start/working current, standby power consumption is less than 30mW.
Support valley lock mode, the highest operating frequency is 500kHz, 300kHz, 140kHz three levels of adjustable; through the peak current jitter to achieve the jitter function; VDD power supply range of 8-100V; the chip integration of a complete and comprehensive protection function, built-in driver can drive the mainstream GaN switch tube.
1. Biyi launched GaN main control, 65W national gallium nitride fast charge exposure
2. Biyi micro's single-tube back-flux gallium nitride drive controller up to 500kHz solves the "card neck"!
3. Biyi micro launched a variety of gallium nitride fast charging solutions
Biyi Micro KP2206
Biyi micro KP2206 has a built-in driver, and the peripheral circuit is very simple. The chip uses negative voltage sampling to ensure that the drive voltage remains stable during any turn-on and shutdown process, and reliability is fully guaranteed. As can be seen from the waveform graph, the drive voltage is very stable during the turn-on process.
Biyi micro KP2206 controller adopts direct drive design ideas, and the built-in LDO of the chip ensures the stability of the 6V drive voltage and improves the consistency of the product. The shutdown loop adopts ultra-low internal resistance downtube, which can effectively suppress oscillation in high-frequency applications and ensure stable shutdown.
1. Biyiwei launched a variety of gallium nitride fast charging solutions
Booth A09: JOULWATT
For the application of gallium nitride fast charging, at present, Jeward has launched four controllers, namely active clamp flyback controller JW1550, quasi-resonant flyback QR controller JW1515H, 33W combined gallium nitride chip JW1566A, and 65W combined gallium nitride chip JW1565, and have developed different fast charging reference designs. Among them, JW1515H is a gallium nitride direct drive controller, which can be used directly with GaN power devices to save peripheral circuits.
JWW1515H
The JW1515H is a highly integrated quasi-resonant flyback controller that supports 700V high voltage start-up, integrated X capacitor discharge function, and supports a wide range of 8~90V power supply without the need for additional regulator components. Built-in highly reliable GaN direct drive circuit, 6V drive voltage can directly drive GaN devices, effectively simplify the drive circuit design, higher reliability. Compared with competitors, the peripheral circuit of The Jetwart 1515H can save 10+ devices, effectively reducing cost and area, and increasing the freedom of the layout.
As one of the leading suppliers of power management ICs, Jetwart Microelectronics Co., Ltd. provides the industry's most comprehensive complete set of solutions in the field of high power fast charging, including PFC, ACF, ZVS, QR controllers, gallium nitride sealing, protocols and synchronous rectifier controllers, etc., covering 20W to 200W. Jiehuate power management IC has been widely used in domestic TOP mobile phones, laptops, e-commerce and other brands.
1. Disassembly report: Zhongxian 65W 2C1A Gallium Nitride fast charger
2. In-depth analysis of JW1515H gallium nitride controller
Booth B114: Renesas Renesas
Renesas introduces the ISL81806 dual synchronous buck controller supporting an 80V input voltage that supports dual-phase buck and dual independent buck outputs. The biggest selling point of this chip is the built-in GaN driver, which supports direct drive of low-pressure Gallium Nitride devices for higher switching frequencies and conversion efficiencies.
Renesas iW9801
The iW9801, The Primary-Side Controller from Renesas Dialog, is a high-performance digital switching power supply flyback controller that supports zero-voltage switching and adaptive multi-mode control operation, and can be used with a secondary controller to achieve high power density and high output accuracy.
The iW9801's built-in multi-mode control supports PWM, PFM, and Burst Mode. The main switch is turned on at zero voltage, which reduces switching losses and EMI, while providing a variety of built-in protection functions. The iW9801 is optimized for Dialog's secondary-side controller, and the chipset with the secondary-side controller enables multi-stage constant voltage and multi-level constant current for fast-charging applications.
Coupled with digital compensation of the secondary-side controller, the chipset reduces the number of components compensated by the external loop and remains stable under all output conditions. The chipset provides USB PD as well as PPS fast charging for mobile devices, and in the 45W adapter design, the iW9801 and Dialog's secondary chip can provide less than 20mW of no-load power consumption.
Dialog's iW9801 is available in a SOIC10 package and provides output short-circuit protection, output overvoltage protection, optocoupler fail-safe, user-programmable built-in overtemperature protection for variable thermal requirements, AC detection and X capacitor discharge control.
Related Reading:
1. Dialog launched a high-power density ZVS power supply sleeve, with a built-in fast charging protocol to help the popularization of high-density PD fast charging
Renesas ISL81806
The Renesas ISL81806 is a dual synchronous buck controller that supports two independent voltage outputs or two phase buck outputs. The ISL81806 provides a gate drive voltage of 5.3V for enhanced-mode GaN device applications. The two outputs have independent voltage and current sensing, supporting independent voltage outputs.
Renesas ISL81806 features peak current mode control, four built-in drivers for Galli Nitride switch tube drive, constant voltage and constant current output, low ripple diode emulation and Burst Mode operation at light load, programmable soft-start function, current sharing and cascading operation, external synchronous clock input, good power output and output current monitoring.
The Renesas ISL81806 has an input voltage range of 4.5-80V, an output voltage supporting 0.8-76V, and supporting switching frequencies up to 2MHz, enabling power conversion in a small volume and high power. Support multi-string battery pack and USB PD3.1 buck applications, to achieve high frequency and efficient voltage conversion, to meet the needs of different occasions of the application of the buck.
1. Renesas introduces ISL81806 dual synchronous buck controller, designed for gallium nitride applications
Booth B64: REACTOR
For gallium nitride fast charging applications, Yacheng Micro has launched gallium nitride direct drive ZVS flyback control chip RM6801SN and CCM/QR flyback control chip RM6601SN and other 6 gallium nitride direct drive chips, in addition to the launch of a combined gallium nitride chip, and cooperated with a number of well-known agreement chip original manufacturers, has achieved the realization of high power density fast charging overall solutions for customers.
Yacheng Micro RM6601SN
Acheng Micro RM6601SN is a high-performance, high-reliability current-controlled PWM controller with less than 65mW standby power consumption over the full voltage range, meeting six-level energy efficiency standards and supporting CCM/QR hybrid mode.
Acheng micro RM6601SN integrates a variety of operating modes, in the case of heavy load, the system works in the traditional fixed frequency 130KHz PWM mode, in the low-voltage input will enter the CCM mode; in the case of heavy load, the system works in QR mode to reduce switching losses, while combining with PFM operating mode to improve system efficiency; RM6601SN using proprietary drive technology, direct drive E-MODE GaN power device, improve product efficiency and power density, simplify EMI filter circuit design, Reduce EMI device cost and be perfect for high-power fast chargers.
Under light or no load conditions, the system operates in Burst Mode mode, effectively removing audio noise, while in this mode, the RM6601SN itself has very low losses, so it can achieve ultra-low standby power consumption. In any mode, a unique jitter mode of operation is integrated to improve EMI.
1. Yacheng Micro launched a highly streamlined and cost-effective 65W GaN fast charging solution
2. [Domestic master control, sufficient supply] Yacheng micro 65W high power density gallium nitride fast charging reference design evaluation
Yacheng micro RM6801SN
Yacheng Micro RM6801SN is an E-Mode GaN FET direct drive control ZVS flyback chip, which is also the first direct drive gallium nitride power device ZVS flyback controller in China, filling the domestic gap.
Acheng micro RM6801SN is a high-performance high-reliability current control type PWM switch control chip, built-in 700V high-voltage start-up, X-cap discharge, adjustable AC input Brown in/out and other functions, operating frequency up to 130KHz, standby power consumption in the full voltage range is less than 65mW, meeting the six-level energy efficiency standards, and support CCM/QR hybrid mode and has a complete variety of protection functions, proprietary ZVS technology to reduce GaNFET switching losses, Improved EMI characteristics.
Yacheng Micro RM6801SN adopts proprietary drive technology to drive E-MODE GaN power devices directly, improve product efficiency and power density, simplify EMI filter circuit design, reduce EMI device costs, and can be applied to high-power fast chargers.
1. The first batch in China: Yacheng Micro released E-Mode GaN FET direct drive ZVS flyback control chip RM6801SN
Sub-micro RM6801ND/NDL
RM6801ND/NDL is a performance reliability current control type PWM switch control core, standby power consumption in the full voltage range of 65mW, full of six levels of energy efficiency standards, and holding CCM/QR hybrid mode, proprietary ZVS technology to reduce GaNFET switching losses, improve product efficiency and power density, improve product EMI.
RM6801ND/NDL integrates multiple modes, in the case of heavy load, the system in the traditional fixed frequency 130Khz/85Khz PWM mode, in the low voltage transmission will enter the CCM mode; in the case of heavy load, the system in QR mode, and the use of proprietary ZVS technology to reduce switching losses, while combining with PFM mode to improve system efficiency; RM6801ND/NDL adopts proprietary drive technology, easy to match the OptionGaN power device to improve EMI design In the case of light load or no load, the system is in BurstMode mode, effectively remove frequency noise, at the same time in this mode, RM6801ND/NDL cost is very low, so it can achieve ultra-low standby power consumption. In any mode, a unique jitter mode is integrated to improve EMI.
The RM6801ND/NDL integrates a variety of protection modes and compensation circuits, including VCCOVP, built-in OTP, external OVP, voltage locking (uvlo), week-by-week overcurrent protection OCP, overload protection (OLP), CS short circuit protection, output Schottky short circuit protection, etc., and built-in slope compensation and ZVS line voltage compensation.
Yacheng micro RM6601ND/NDL
Acheng Micro RM6601ND is a performance reliable current control PWM switch control core, standby power consumption of 75mW in the full voltage range, full of six energy efficiency standards, and holding CCM/QR hybrid mode.
RM6601ND integrates a variety of modes, in the case of heavy load, the system in the traditional fixed frequency 130Khz PWM mode, in the low voltage transmission will enter the CCM mode; in the case of heavy load, the system in QR mode to reduce switching losses, while combining the PFM mode to improve system efficiency; RM6601ND adopts proprietary drive technology, direct drive E-mode GaN FET; in the case of light load or no load, the system is used in BurstMode mode, effectively remove frequency noise, At the same time, in this mode, the RM6601ND cost loss is very low, so it can achieve ultra-low standby power consumption. In any mode, a unique jitter mode is integrated to improve EMI.
The RM6601ND/SD integrates a variety of protection modes and compensation circuits, including VCCOVP, built-in OTP, external OVP, voltage locking (uvlo), week-by-week overcurrent protection OCP, overload protection (OLP), CS short circuit protection, output Schottky short circuit protection, etc., and built-in slope compensation function.
Yacheng Micro RM6501SN
Acheng Micro RM6501S/SN is a performance reliable current control PWM switch control core, standby power consumption of 75mW in the full voltage range, full of six energy efficiency standards, and holding CCM/QR hybrid mode.
Acheng micro RM6501S/SN integrates a variety of modes, in the case of heavy load, the system in the traditional fixed frequency 130KHz PWM mode, in the low voltage transmission will enter the CCM mode; in the case of heavy load, the system in QR mode to reduce switching losses, while combining PFM mode to improve system efficiency; RM6501SN adopts proprietary drive technology, direct drive E-mode GaN FET; in the case of light load or no load, the system is effectively removed in BurstMode mode At the same time, the RM6501SN has very low losses in this mode, so it can achieve ultra-low standby power consumption. In any mode, a unique jitter mode is integrated to improve EMI.
The RM6501S/SN integrates multiple protection modes and compensation circuits, including VCCOVP, built-in OTP, external OVP, voltage locking (uvlo), week-by-week overcurrent protection OCP, overload protection (OLP), CS short circuit protection, output Schottky short circuit protection, etc., and built-in slope compensation function.
Booth B111: MIX-DESIGN Max Semiconductor
Max Semiconductor launched a gallium nitride fast charge master control + gate driver SOC chip MX6535, becoming the first company in China to master gallium nitride control and drive technology, and becoming the third company to launch gallium nitride drivers and controllers after THE United States TI and ON Semiconductor in the world.
Max Semiconductor MX6535
The MX6535 is a controller and driver designed for high-speed power devices such as Gallium Nitride or Super Silicon, and the design optimization in drive speed and drive power consumption is more suitable for the design and application of fast charging source that require high performance and small size.
A quasi-resonant (QR) control architecture with high-performance current mode and better interference immunity digital control techniques for the characteristics of Gallium Nitride devices, while optimizing the associated protection functions to make the system operate more reliably.
The MX6535 can achieve accurate multi-stage constant voltage and multi-stage constant current regulation without the need for traditional secondary current feedback circuits, and using the second generation smart-Feedback technology of Mesdice, it not only eliminates the need for voltage and current feedback circuits of traditional power supplies to compensate for the network, but also maintains system stability at a wide range of outputs (3.3V to 20V) under all operating conditions.
MX6535 and the same from the Meticais semiconductor integrated synchronous rectification of the secondary side fast charging protocol SOC controller with the design, can be very convenient to achieve 18W ~ 100W USB PD or QC small size fast charging source design, the internal advanced digital control system can be based on the output capacity of the mobile phone to achieve fast and smooth voltage and power conversion. In addition, the MX6535 can also achieve compatibility with mediat-related (MTK) PE2.0 plus charger protocol according to user needs.
1. Breaking the monopoly of foreign enterprises, the core device of domestic gallium nitride has been broken, and the first controller + driver SOC chip has been released
2. The first full set of domestic chips 65W gallium nitride fast charging evaluation!
Booth C10: HYASIC Huayuan Semiconductor
It is understood that Huayuan Semiconductor has launched 7 direct drive gallium nitride fast charging controllers. At the same time, Huayuan Semiconductor also has a layout in the field of closed gallium nitride chips, providing diversified chip solutions for high-density power products.
Huayuan HY3602H
Huayuan HY3602H is an intelligent digital multimode flyback controller in an SOT23-6 package. The newly developed architecture has the inherent capabilities to meet regulatory requirements around the world.
Huayuan HY3602H integrates a wealth of protection and features, such as line compensation, slope compensation, transformer short circuit protection, output overvoltage protection, overtemperature protection, undervoltage protection, and sense resistor short circuit protection.
Huayuan HY1655E
Huayuan HY1655E is an intelligent digital multimode flyback controller that supports high voltage start-up, in an SOP7L package, and the newly developed architecture is an inherent feature to meet industry regulatory requirements.
Huayuan HY1655E integrates a wealth of protection and features, such as line compensation, slope compensation, transformer short circuit protection, output overvoltage protection, VCC OVP, overload protection, overtemperature protection, undervoltage protection.
Huayuan HY3655
Huayuan HY3655 is an intelligent digital multimode flyback with high-voltage start-up and built-in GaN drivers, and the newly developed architecture is an inherent feature of meeting industry regulatory requirements.
Huayuan HY3655 integrates a wealth of protection and features, such as line compensation, slope compensation, transformer short circuit protection, output overvoltage protection, VCC OVP, overload protection, overtemperature protection, undervoltage protection.
The chip is available in a SOIC-7 package and is available in three options, with the HY3655G supporting an 89kHz switching frequency, the HY3655H supporting a 130kHz switching frequency, and the HY3655X supporting a 200kHz switching frequency.
Huayuan HY3602E
Huayuan HY3602E is an intelligent digital multimode flyback controller in an SOT23-6 package. The newly developed architecture has the inherent capabilities to meet regulatory requirements around the world.
Huayuan HY3602E integrates rich protection and functions, such as line compensation, slope compensation, transformer short circuit protection, output overvoltage protection, overtemperature protection, undervoltage protection, and sense resistor short circuit protection.
Charging head net summary
The maturity of gallium nitride technology has injected energy into the update iteration of the fast charging source market, according to the incomplete statistics of the charging head network, most of the products launched by the original gallium nitride factory on the market are GaN power device single tube, which must be added when applied to fast charging products. The gallium nitride direct drive controller uses the design of built-in drive power, so that GaN power devices can omit the drive circuit in application, simplify the design of peripheral circuits, and improve the power density of power products, so it plays an important role in the rapid popularization of gallium nitride technology.
Up to now, the charging head network has dismantled more than 100 ganide fast chargers, of which the fast charging sources developed based on GaN single-tube power devices account for a large proportion, which means that the market has a strong demand for gallium nitride direct drive controllers.
According to statistics, at the upcoming 2022 (Spring) USB PD & Type-C Asia Conference, there will be 8 Gallium Nitride fast charging direct drive controller manufacturers participating in the exhibition, and dozens of product solutions will be unveiled. When power supply manufacturers develop gallium nitride fast charging products, not only do they have more and more choices of power devices, but also have richer choices for direct drive controllers.