It is reported that the third issue of Volume 3 (2024 Autumn Issue), the world's only comprehensive international academic journal focusing on chips, has been officially published. Chip is currently published quarterly, with Volume 3, Issue 3 being a collection of eight high-quality articles published by the journal in the third quarter of 2024. Among them, 7 articles are articles in this regular issue, and 1 article is Cryogenic Chip, the first special issue of Chip (which will be included in the special collection of this special issue). All Chip articles are Gold Open Access articles.
Chip Vol. 3, No. 3合集可通过此链接免费阅读和下载:
https://www.sciencedirect.com/journal/chip/vol/3/issue/3
Among the 8 regular journal articles in this issue of Chip, 7 are original research articles, in which the authors report the latest research results of their respective teams on hot topics such as silicon local quantum dot thermometers, reconfigurable silicon nanowire transistors, germanium photovoltaic conversion erbium fiber laser beams, suspended nano-thin film silicon-based photonic integrated circuits, dual ion implantation terminal vertical GaN Schottky barrier diodes, and high-sensitivity diamond X-ray detector arrays. The first is a long review, in which the author makes a detailed and profound review of the development status and challenges of HfO₂-based ferroelectric thin films for non-volatile memory, and looks forward to the future research prospects of these research fields. In the third issue of Chip Volume 3, the original research article "Suspended nanomembrane silicon photonic integrated circuits" written by Zhenzhou Cheng's team from Tianjin University was selected as the cover article of this issue.
Cover of Chip Vol. 3, No. 3 (Fall 2024 issue).
Chip 本期常规刊文巡礼
(in order of article number)
1. Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon. Mathieu de Kruijf's team at the London Centre for Nanotechnology at University College London used a quantum dot thermometer embedded in an industry-standard silicon field-effect transistor (FET) to assess the local temperature increase caused by placing an active field-effect transistor in close proximity. The effects of static and dynamic operating regimes have been studied intensively, and the FET has a power budget of 45 nW at 100 nm for static operation, while at 216 μm, the power budget increases to 150 μW. When operated dynamically, the tested switching frequency is up to 10 MHz with negligible temperature gain. This approach can accurately map the available power budget far from a solid-state quantum processor and points to the possible conditions under which cryogenic electronic circuits allow hybrid quantum-classical systems to operate. The first author and corresponding author is Mathieu de Kruijf. This article was selected as one of the selected articles by the editors of Featured in Chip.
Original reading link:
https://www.sciencedirect.com/science/article/pii/S2709472324000157
推荐引用格式：de Kruijf, M. et al. Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon. Chip 3, 100097 (2024).
2. Channel-bias-controlled reconfigurable silicon nanowire transistors via an asymmetric electrode contact strategy. Linwei Yu's team at Nanjing University proposed a simple single-gate R-FET structure with asymmetric source/drain (S/D) electrode contact, in which the FET channel polarity can be changed by changing the sign of the channel-biased Vds. These R-FETs are fabricated on order-arranged planar silicon nanowire (SiNW) channels, grown by in-plane solid-liquid-solid mechanisms, and contacted by Ti/Al and Pt/Au on S/D electrodes, respectively. This channel-biased R-FET is implemented on either p-doped (indium-doped) or n-type doped (phosphorus) SiNW channels, while the R-FET prototype shows an impressive high switching ratio of >10⁶ and a steep subthreshold swing of 79 mV/dec. The first author is Qian Wentao, and the corresponding authors are Yu Linwei and Wang Junzhuan.
Original reading link:
https://www.sciencedirect.com/science/article/pii/S2709472324000169
推荐引用格式：Qian, W., Wang, J., Xu, J. & Yu, L. Channel-bias-controlled reconfigurable silicon nanowire transistors via an asymmetric electrode contact strategy. Chip 3, 100098 (2024).
3. Remote electric powering by germanium photovoltaic conversion of an Erbium-fiber laser beam. 马萨诸塞大学波士顿分校Richard Soref团队提出了一种32元单晶厚层锗光伏板，用于高效捕获准直径1.13 m光束。 0.78平方米的光伏面板由商用锗晶圆制成。 对于4000至10000 W范围内的连续波入射激光束，通过热、电和红外模拟预测，在350至423 K的面板温度下，电输出为660至1510瓦。 第一作者和通讯作者为Richard Soref。
Original reading link:
https://www.sciencedirect.com/science/article/pii/S2709472324000170
推荐引用格式：Soref, R., De Leonardis, F., Moutanabbir, O. & Daligou, G. Remote electric powering by germanium photovoltaic conversion of an Erbium-fiber laser beam. Chip 3, 100099 (2024).
4. Challenges and recent advances in HfO₂-based ferroelectric films for non-volatile memory applications. Ren Tianling's team at Tsinghua University elaborated on the ferroelectric storage technology based on HfO₂. HfO₂'s ferroelectric storage technology has attracted a lot of attention due to its high performance, high energy efficiency, and full compatibility with standard complementary metal-oxide-semiconductor (CMOS) processes. These non-volatile memory components, such as ferroelectric random access memory (FeRAM), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs), have different data access mechanisms, their respective advantages, and specific application boundaries in next-generation memories even beyond the von Neumann architecture. In this paper, ferroelectric HfO₂ storage technology is reviewed, the current challenges are pointed out, and the future research directions and prospects are prospected. The co-first authors are Shao Minghao and Zhao Ruiting, and the corresponding authors are Ren Tianling and Liu Houfang.
Original reading link:
https://www.sciencedirect.com/science/article/pii/S2709472324000194
推荐引用格式：Shao, M.-H. et al. Challenges and recent advances in HfO₂-based ferroelectric films for non-volatile memory applications. Chip 3, 100101 (2024).
5. Suspended nanomembrane silicon photonic integrated circuits. Zhenzhou Cheng's team at Tianjin University proposed and proved that the suspended nano-membrane silicon (SNS) photonic integrated circuit has a deep subwavelength waveguide thickness that can work in the short-wavelength mid-infrared region. The key building elements, namely grating couplers, waveguide arrays, microresonators, etc., are showcased that exhibit excellent performance in terms of bandwidth, retroreflectance, mass factor, and manufacturing tolerances. The results show that SNS photonic integrated circuits have high compatibility with multi-project foundry services. The first authors are Guo Rongxiang, Lang Xiyue and Zhang Zunyue, and the corresponding authors are Cheng Zhenzhou of Tianjin University and Wang Jiaqi of Shenzhen University. This article was selected as the cover article of this issue and one of the editors' selected articles of this issue of Featured in Chip.
Original reading link:
https://www.sciencedirect.com/science/article/pii/S2709472324000078
推荐引用格式：Guo, R. et al. Suspended nanomembrane silicon photonic integrated circuits. Chip 3, 100104 (2024).
6. Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination. 深圳大学刘新科团队采用氢化物气相外延（HVPE）技术完整地生长了氮化镓（GaN）衬底及其15 μm外延层。 为了提高垂直GaN-on-GaN肖特基势垒二极管（SBD）的击穿电压（VBR），采用碳和氦双离子共注入来产生边缘终止。 所得到的器件具有0.55 V的低导通电压，约10⁹的高开关比和1.93 mΩ cm²的低导通电阻。 当离子注入边缘终止时，器件的最大VBR达到1575 V，平均提高126%。 这些器件显示出1.28 GW cm⁻²的高品质因子，并在脉冲应力测试中显示出出色的可靠性。 第一作者为李博，通讯作者为刘新科。
Original reading link:
https://www.sciencedirect.com/science/article/pii/S2709472324000236
推荐引用格式：Li, B. et al. Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination. Chip 3, 100105 (2024).
7. Highly sensitive diamond X-ray detector array for high-temperature applications. Shan Chongxin's team at Zhengzhou University used single crystal diamond as the material to build a 10 × 10 X-ray photodetector array. In order to improve the sensitivity of the diamond X-ray detector, an asymmetrical sandwich electrode structure is adopted. In addition, trenches are created by laser cutting to prevent crosstalk between adjacent pixels. The diamond X-ray detector array exhibited excellent performance, including a low detection limit of 4.9 nGys⁻¹, a sensitivity of 14.3 mC Gy⁻¹ cm⁻², and a light-to-dark current ratio of 18312, the highest reported value of any diamond X-ray detector to date. In addition, these diamond X-ray detectors can operate at high temperatures of up to 450°C, making them suitable for development in harsh environments. The first author is Dou Wenjie, and the corresponding authors are Yang Xun, Zhou Weimin, and Shan Chongxin.
Original reading link:
https://www.sciencedirect.com/science/article/pii/S2709472324000248
推荐引用格式：Dou, W. et al. Highly sensitive diamond X-ray detector array for high-temperature applications. Chip 3, 100106 (2024).