Abstract: On January 11, STMicroelectronics (ST) today announced that the first GaN power semiconductor product (PowerGaN) in the G-HEMT series can significantly reduce energy consumption and reduce the size of various electronic products; it can be used in chargers, PC external power adapters, LED lighting drivers, televisions and so on. Not only that, but the product can also be used in high-power markets, such as industrial drive motors, solar inverters, electric vehicles and chargers.
On January 11, STMicroelectronics (ST) today announced that the first GaN power semiconductor product (PowerGaN) in the G-HEMT family can significantly reduce energy consumption and size reduction for a variety of electronic products, and can be used in chargers, PC external power adapters, LED lighting drivers, televisions and more. Not only that, but the product can also be used in high-power markets, such as industrial drive motors, solar inverters, electric vehicles and chargers.
ST said that the global production of consumer electronics is very large, and if the efficiency is improved, the CO2 emissions can be greatly reduced. Gallium nitride (GaN) is a wide bandgap compound semiconductor material, its voltage resistance is better than that of traditional silicon materials, and does not affect the on-resistance efficiency, so it can reduce switching losses. In addition, the switching efficiency of GaN products is also higher than that of traditional silicon-based products, and the switching frequency can be higher, so the application circuit can use smaller passive components.
ST notes that all of these benefits allow designers to reduce the total loss of the power converter (less heat generated) and improve efficiency. As a result, GaN allows for miniaturization of electronics, such as PC power adapters with GaNs that are smaller and lighter than today's popular chargers. According to the predictions of related manufacturers, after using GaN components, standard mobile phone chargers can be reduced by up to 40%, or higher power can be output under the same size conditions.
To this end, ST introduces the first product in the new G-HEMT product family (650V SGT120R65A), which has a maximum on-resistance of 120m (Rds(on)), a maximum output current of 15A and a Kelvin pin for optimized gate drive.
Edoardo Merli, Vice President of ST's Automotive and Discrete Components Division and General Manager of power transistors, said commercial GaN products are the next battleground for power semiconductors, and ST is introducing the first of its new portfolio of STPOWER products, delivering breakthrough performance for consumer, industrial and automotive power supply applications. In the future, ST will gradually expand the PowerGaN product portfolio, allowing customers around the world to design more efficient and compact power supplies.
Editor: Xin ZhiXun - Lin Zi
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