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【202310 Update】SiC mainstream substrate epitaxy, price, equipment and trend analysis

author:Childe Well

According to CASA data, SiC substrate and epitaxy are expected to decline at an annual rate of 8% as industrial technology gradually matures (yield improvement) and capacity expansion (supply improvement).

SiC substrate and epitaxial wafer price

【202310 Update】SiC mainstream substrate epitaxy, price, equipment and trend analysis

SiC substrate price development trend (RMB/cm²)

The price of 6-inch conductive silicon carbide village bottom decreases year by year with the increase of yield, and the prices in 2022-25 are 6600/6300/6000/5500 yuan/piece, respectively.

In 2022, the price of 6-inch semi-insulated silicon carbide substrate will be about 7,000 yuan / piece, and it is expected to be reduced to 6,000 yuan / piece in 2025.

【202310 Update】SiC mainstream substrate epitaxy, price, equipment and trend analysis

SiC substrates, devices, and epitaxial wafer market size forecasts

The main reasons for the low domestic production rate of SiC epitaxial wafers:

  • There is a shortage of imported epitaxial furnaces
  • Domestic epitaxial furnace to be verified
  • The mass production quality of epitaxial wafers is unstable (consistency in concentration and thickness), and it is difficult to mass produce
【202310 Update】SiC mainstream substrate epitaxy, price, equipment and trend analysis

Price development trend of silicon carbide epitaxial wafer (RMB/cm^2)

【202310 Update】SiC mainstream substrate epitaxy, price, equipment and trend analysis

Current status of SiC substrate share at home and abroad

SiC equipment and manufacturing status

【202310 Update】SiC mainstream substrate epitaxy, price, equipment and trend analysis

SiC long crystal: The difficulty of the process lies in temperature control, and the thermal field materials still rely on imports

SiC long crystal: The difficulty of the process lies in temperature control, and the thermal field materials still rely on imports

【202310 Update】SiC mainstream substrate epitaxy, price, equipment and trend analysis

SiC epitaxial furnace: CVD has moderate cost &good quality &fast growth rate, which is the mainstream epitaxial technology

SiC epitaxial furnace: CVD has moderate cost &good quality &fast growth rate, which is the mainstream epitaxial technology

【202310 Update】SiC mainstream substrate epitaxy, price, equipment and trend analysis

SiC dicing: SiC wafers have high hardness, brittleness and low toughness, and traditional wafer mechanical cutting is easy to cause more defects. Basically, laser cutting is used

【202310 Update】SiC mainstream substrate epitaxy, price, equipment and trend analysis

SiC slicing: In the future, diamond wire cutting and laser cutting will replace mortar wire as the mainstream technology

In the future, diamond wire cutting and laser cutting will replace mortar wire as mainstream technology

【202310 Update】SiC mainstream substrate epitaxy, price, equipment and trend analysis

Other SiC devices

Other SiC equipment also includes grinding, polishing, modification, slicing, oxidative annealing, thinning and many other equipment, which are not listed here.

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